| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| KLM8G1GETF-B041006 | eMMC |
SAMSUNG/三星 |
20160 |
|||||
| KLM4G1FETE-B041 | FLASH存储器 |
SAMSUNG/三星 |
20480 |
|||||
| KLMCG2KCTA-B041 | 存储IC |
SAMSUNG/三星 |
2240 |
|||||
| K3KL9L90DM-MGCU | SAMSUNG/三星 |
6400 |
||||||
| KLM8G1GEUF-B04P | 存储IC |
SAMSUNG/三星 |
10080 |
|||||
| STM32F722RET6 | 32位MCU |
ST/意法 |
25+ |
28800 |
||||
| KLMAG1JETD-B041006 | SAMSUNG/三星 |
8960 |
||||||
| K4AAG165WC-BCWE |
|
存储IC |
SAMSUNG/三星 |
25+ |
20480 |
|||
| MT40A1G16KH-062E AAT:E | MICRON/美光 |
3000 |
||||||
| MTFC64GAPALGT-AIT | MICRON/美光 |
36234 |
||||||
| MT40A1G8SA-062E:E | MICRON/美光 |
23+ |
30000 |
|||||
| MT53D1024M32D4DT-053 WT:D | 存储IC |
MICRON/美光 |
23+ |
6000 |
||||
| 000M5P9001DM-B424 | SAMSUNG/三星 |
10000 |
||||||
| M471A1K43EB1-CWE | SAMSUNG/三星 |
20000 |
||||||
| M321R8GA0EB2-CWM | SAMSUNG/三星 |
1000 |
||||||
| MZQL2960HCJR-00A07 | SAMSUNG/三星 |
1200 |
||||||
| HMA82GU6DJR8N-XN | SKHYNIX/海力士 |
350 |
||||||
| HMCG78MEBUA | SKHYNIX/海力士 |
1000 |
||||||
| HMAA4GR7CJR8N-XN | SKHYNIX/海力士 |
1000 |
||||||
| H5AN4G8NBJR-VKC | IC |
SKHYNIX/海力士 |
24 |
300000 |
||||
| H5ANAG6NCJR-XNC | 动态随机存取存储器(DRAM) |
SKHYNIX/海力士 |
6400 |
|||||
| STEVAL-MKI174V1 | 开发板 |
ST/意法 |
2 |
|||||
| SI34061-A-GMR | 电源IC |
SKYWORKS/思佳讯 |
5000 |
|||||
| MPQ4315GRE-AEC1-Z | DC/DC调制IC |
MPS/美国芯源 |
5000 |
|||||
| ALM2403QPWPRQ1 | 运放IC |
TI/德州仪器 |
542 |
|||||
| TPS6281020QWRWYRQ1 | DC/DC调制IC |
TI/德州仪器 |
34555 |
|||||
| MAX49017ATA/VY+T | 模拟IC |
ADI/亚德诺 |
1745 |
|||||
| MAX20006AFOC/VY+T | DC/DC调制IC |
ADI/亚德诺 |
79363 |
|||||
| CMB02070X5609GB200 | 贴片电阻 |
VISHAY/威世 |
944000 |
|||||
| fp25r12w1t7_b11 | IGBT管 |
INFINEON/英飞凌 |
24 |