| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| TLV75801PDRVR | 电源IC |
TI/德州仪器 |
22+ |
3398 |
||||
| STM32L051C8T6 | 32位MCU |
ST/意法 |
22+ |
75000 |
||||
| MT25QU512ABB8ESF-0SIT | 存储IC |
MICRON/美光 |
23+ |
2000 |
||||
| MT25QL512ABB8ESF-0SIT | 存储IC |
MICRON/美光 |
23+ |
7000 |
||||
| MT25QL128ABA1EW7-0SIT | 存储IC |
MICRON/美光 |
23+ |
8000 |
||||
| K4T1G084QJ-BCE7 | 存储IC |
SAMSUNG/三星 |
23+ |
10240 |
||||
| FZ750R65KE3 | IGBT管 |
INFINEON/英飞凌 |
19 |
8 |
||||
| BQ25601DRTWR | 电源IC |
TI/德州仪器 |
22 |
12000 |
||||
| W25Q128JVSIQ | WINBOND/华邦 |
23+ |
40000 |
|||||
| W25Q64JWSSIQ | WINBOND/华邦 |
23+ |
20000 |
|||||
| MT47H64M16NF-25E IT:M | MICRON/美光 |
23+ |
8000 |
|||||
| MT40A1G8SA-075:E | SDRAM存储器 |
MICRON/美光 |
23+ |
50000 |
||||
| MT40A1G16TB-062E:F | MICRON/美光 |
23+ |
10000 |
|||||
| MT40A2G8NEA-062E:J | MICRON/美光 |
23+ |
2000 |
|||||
| MT53E512M32D1ZW-046 IT:B | DDR存储器 |
MICRON/美光 |
23+ |
6000 |
||||
| MT62F1G64D8EK-031 WT:B | MICRON/美光 |
23+ |
21000 |
|||||
| MT53D512M32D2DS-046 WT:D | MICRON/美光 |
23+ |
20000 |
|||||
| MTA36ASF4G72PZ-3G2R1 | MICRON/美光 |
23+ |
2000 |
|||||
| MTC10F1084S1RC48BA1 | MICRON/美光 |
23+ |
500 |
|||||
| MTFDDAK7T6TGA-1BC1ZABYY | MICRON/美光 |
23+ |
200 |
|||||
| TDA2EGBHQCBDRQ1 | TI/德州仪器 |
22+ |
498 |
|||||
| MT62F1G64D8EK-031 AUT:B | MICRON/美光 |
22 |
520 |
|||||
| IPD80R1K0CE | 稳压(齐纳)二极管 |
INFINEON/英飞凌 |
25 |
|||||
| BSC034N06NS | MOS(场效应管) |
INFINEON/英飞凌 |
4280 |
|||||
| FOD3182SD | 其他被动元件 |
FAIRCHILD/仙童 |
1000 |
|||||
| FDN360P | MOS(场效应管) |
FAIRCHILD/仙童 |
12000 |
|||||
| FGH40N60SFDTU | IGBT管 |
FAIRCHILD/仙童 |
13500 |
|||||
| NC7SZ125M5X | 逻辑IC |
FAIRCHILD/仙童 |
24000 |
|||||
| PCF7936AA/3851/C/6 | 单片机MCU |
NXP/恩智浦 |
5000 |
|||||
| MAX38888ATD+T | 电源IC |
MAXIM/美信 |
10000 |