| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| VND5T100AJTR-E | 存储IC |
ST/意法 |
23+ |
65000 |
||||
| CAT24C64WI-GT3 | EEPROM存储器 |
ONSEMI/安森美 |
50000 |
|||||
| Z0103MN5AA4 | ST/意法 |
22+ |
4000 |
|||||
| LMZ30602RKGT | 电源IC |
TI/德州仪器 |
22 |
100 |
||||
| IS25LP064A-JMLE | 内存芯片 |
ISSI/芯成 |
23+ |
4400 |
||||
| JS28F256J3F105A | 其他被动元件 |
MICRON/美光 |
23+ |
2304 |
||||
| LMZ30602RKGT | ST/意法 |
23+ |
100 |
|||||
| AR0233ATSC17XUEA1-DPBR | ONSEMI/安森美 |
24 |
2581 |
|||||
| FM25V02A-GTR | CYPRESS/赛普拉斯 |
23+ |
10000 |
|||||
| MT29F8G08ABACAWP-IT:C | MICRON/美光 |
23+ |
1000 |
|||||
| K4B2G1646F-BYMA | SAMSUNG/三星 |
23+ |
22400 |
|||||
| MT41K256M16TW-107 AIT:P | MICRON/美光 |
23+ |
12000 |
|||||
| H5ANAG8NCJR-XNC | SKHYNIX/海力士 |
23+ |
10000 |
|||||
| MT40A2G8SA-062E:F | MICRON/美光 |
23+ |
8000 |
|||||
| MT40A1G16KD-062E:E | MICRON/美光 |
23+ |
9000 |
|||||
| MT53E1G32D2FW-046 WT:B | MICRON/美光 |
23+ |
10000 |
|||||
| MT62F2G32D4DS-026 WT:B | MICRON/美光 |
23+ |
6000 |
|||||
| MT62F4G32D8DV-023 WT:C | MICRON/美光 |
23+ |
4000 |
|||||
| M321R4GA3BB6-CQK | SAMSUNG/三星 |
23+ |
2000 |
|||||
| MTC40F2046S1RC56BD1 | MICRON/美光 |
23+ |
10000 |
|||||
| MTFDKBA480TFR-1BC1ZABYY | MICRON/美光 |
23+ |
3 |
|||||
| ADC12D1600RFIUTOPB | TI/德州仪器 |
23 |
22 |
|||||
| DAC38RF82IAAV | 贴片二极管 |
TI/德州仪器 |
22 |
2000 |
||||
| SS34 | 肖特基二极管 |
FAIRCHILD/仙童 |
3000 |
|||||
| FDS8949 | MOS(场效应管) |
FAIRCHILD/仙童 |
7500 |
|||||
| FOD817DSD | 光电耦合器-后续要删除 |
FAIRCHILD/仙童 |
10000 |
|||||
| FDC640P | MOS(场效应管) |
FAIRCHILD/仙童 |
30000 |
|||||
| NDS9948 | MOS(场效应管) |
FAIRCHILD/仙童 |
52500 |
|||||
| ST21NFCDXBGARA7 | 半导体材料 |
ST/意法 |
54000 |
|||||
| XLL336333.333333I | RENESAS/瑞萨 |
500 |