| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| K3KL9L90DM-MGCU | SAMSUNG/三星 |
6400 |
||||||
| KLM8G1GEUF-B04P | 存储IC |
SAMSUNG/三星 |
10080 |
|||||
| STM32F722RET6 | 32位MCU |
ST/意法 |
25+ |
28800 |
||||
| KLMAG1JETD-B041006 | SAMSUNG/三星 |
8960 |
||||||
| KLM8G1GETF-B041006 | eMMC |
SAMSUNG/三星 |
20160 |
|||||
| KLM4G1FETE-B041 | FLASH存储器 |
SAMSUNG/三星 |
20480 |
|||||
| KLMCG2KCTA-B041 | 存储IC |
SAMSUNG/三星 |
2240 |
|||||
| K4AAG165WC-BCWE |
|
存储IC |
SAMSUNG/三星 |
25+ |
20480 |
|||
| TLV75801PDRVR | 电源IC |
TI/德州仪器 |
22+ |
3398 |
||||
| STM32L051C8T6 | 32位MCU |
ST/意法 |
22+ |
75000 |
||||
| K4T1G084QJ-BCE7 | 存储IC |
SAMSUNG/三星 |
23+ |
10240 |
||||
| FZ750R65KE3 | IGBT管 |
INFINEON/英飞凌 |
19 |
8 |
||||
| BQ25601DRTWR | 电源IC |
TI/德州仪器 |
22 |
12000 |
||||
| MT53E512M32D1ZW-046 IT:B | DDR存储器 |
MICRON/美光 |
23+ |
6000 |
||||
| MT62F1G64D8EK-031 WT:B | MICRON/美光 |
23+ |
21000 |
|||||
| MTA36ASF4G72PZ-3G2R1 | MICRON/美光 |
23+ |
2000 |
|||||
| MTC10F1084S1RC48BA1 | MICRON/美光 |
23+ |
500 |
|||||
| MTFDDAK7T6TGA-1BC1ZABYY | MICRON/美光 |
23+ |
200 |
|||||
| MT62F1G64D8EK-031 AUT:B | MICRON/美光 |
22 |
520 |
|||||
| IPD80R1K0CE | 稳压(齐纳)二极管 |
INFINEON/英飞凌 |
25 |
|||||
| BSC034N06NS | MOS(场效应管) |
INFINEON/英飞凌 |
4280 |
|||||
| PCF7936AA/3851/C/6 | 单片机MCU |
NXP/恩智浦 |
5000 |
|||||
| MAX38888ATD+T | 电源IC |
MAXIM/美信 |
10000 |
|||||
| LT4363IDE-1#TRPBF | ADI/亚德诺 |
2500 |
||||||
| LPC55S69JBD100K | 其他IC |
NXP/恩智浦 |
28350 |
|||||
| 2BG24B110F15IM48BR | SILICON/芯科 |
45000 |
||||||
| TJA1051T/3118 | NXP/恩智浦 |
12500 |
||||||
| TJA1021T/20/C118 | NXP/恩智浦 |
37500 |
||||||
| S9KEAZ128AMLH | 单片机MCU |
NXP/恩智浦 |
15200 |
|||||
| RFX2401C-SW | SKYWORKS/思佳讯 |
5000 |